high voltage application. features high transition frequency : f t =100mhz(typ.). complementary to ktc2238/a. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector (heat sink) 3. emitter to-220ab 10.30 max 15.30 max 0.80 3.60 0.20 3.00 6.70 max 13.60 0.50 5.60 max 0.50 1.50 max 2.54 4.70 max 2.60 a b c d e f g h j k l m n o p a e mm 123 f b g h l c k j o n p d 1.37 max 1.50 max r s q c t q1.50 r 9.50 0.20 s 8.00 0.20 t 2.90 max + _ + _ + _ + _ 1999. 9. 21 1/1 semiconductor technical data KTA968/a epitaxial planar pnp transistor revision no : 0 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-160v, i e =0 - - -1.0 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -1.0 a collector-emitter breakdown voltage KTA968 v (br)ceo i c =-10ma, i b =0 -160 - - v KTA968a -180 - - emitter-base breakdown voltage v (br)ebo i e =-1ma, i c =0 -5.0 - - v dc current gain h fe (note) v ce =-5v, i c =-100ma 70 - 240 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - - -1.5 v base-emitter voltage v be v ce =-5v, i c =-500ma - - -1.0 v transition frequency f t v ce =-10v, i c =-100ma - 100 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 30 - pf electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage KTA968 v cbo -160 v KTA968a -180 collector-emitter voltage KTA968 v ceo -160 v KTA968a -180 emitter-base voltage v ebo -5 v collector current i c -1.5 a emitter current i e 1.5 a collector power dissipation (tc=25 1 ) p c 25 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 note : h fe classification 0:70 140, y:120 240
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